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SIGC07T60NC - IGBT

General Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Key Features

  • 600V NPT technology.
  • 100µm chip.
  • positive temperature coefficient.
  • easy paralleling C This chip is used for:.
  • IGBT-Modules.

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www.DataSheet4U.com SIGC07T60NC IGBT Chip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling C This chip is used for: • IGBT-Modules Applications: • drives G E Chip Type SIGC07T60NC VCE 600V ICn 6A Die Size 2.6 x 2.6 mm2 Package sawn on foil Ordering Code Q67050-A4134A001 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 2.6 x 2.6 6.76 / 4.3 1.11 x 1.78 0.5 x 0.