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SIGC07T60UN - IGBT

General Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Key Features

  • low Eoff.
  • 600V NPT technology.
  • 100µm chip.
  • short circuit prove.
  • positive temperature coefficient.
  • easy paralleling This chip is used for:.
  • SKB06N60HS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SIGC07T60UN High Speed IGBT Chip in NPT-technology FEATURES: • low Eoff • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • SKB06N60HS Applications: • Welding • PFC • UPS C G E Chip Type SIGC07T60UN VCE ICn 600V 6A Die Size 2.6 x 2.6 mm2 Package Ordering Code sawn on foil Q67050-A4220A101 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 2.6 x 2.6 mm2 6.8 / 4.1 1.78 x 1.1 0.499 x 0.