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SIGC11T60NC - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Features

  • 600V NPT technology.
  • 100µm chip.
  • positive temperature coefficient.
  • easy paralleling C This chip is used for:.
  • IGBT Modules.

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Datasheet preview – SIGC11T60NC

Datasheet Details

Part number SIGC11T60NC
Manufacturer Infineon Technologies
File Size 101.72 KB
Description IGBT
Datasheet download datasheet SIGC11T60NC Datasheet
Additional preview pages of the SIGC11T60NC datasheet.

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www.DataSheet4U.com SIGC11T60NC IGBT Chip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling C This chip is used for: • IGBT Modules Applications: • drives G E Chip Type SIGC11T60NC VCE 600V ICn 10A Die Size 3.25 x 3.25 mm2 Package sawn on foil Ordering Code Q67050-A4158A001 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 3.25 x 3.25 10.6 / 7.4 2 x 1.6 1.08 x 0.
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