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SIGC128T170R3 - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Features

  • 1700V Trench + Field Stop technology.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling 3 This chip is used for:.
  • power module C.

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Full PDF Text Transcription

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www.DataSheet4U.com SIGC128T170R3 IGBT Chip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC128T170R3 VCE ICn Die Size 11.33 x 11.33 mm2 Package sawn on foil Ordering Code Q67050A4189-A001 1700V 100A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 11.33 x 11.33 8 x ( 4.48 x 2.15 ) 1.18 x 1.09 128.4 / 99.
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