Datasheet4U Logo Datasheet4U.com

SIGC128T170R3E - IGBT

General Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) 2.1 Change wafer size to 200 mm 2.2 Additional basic types L7787M, L7787T, L7787E; new gate pad des

Key Features

  • 1700V Trench & Field Stop technology.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling This chip is used for:.
  • power modules.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SIGC128T170R3 IGBT Infineon Technologies
SIGC121T120R2C IGBT Infineon Technologies
SIGC121T120R2CL IGBT Infineon Technologies
SIGC121T120R2CS IGBT Infineon Technologies
SIGC121T60NR2C IGBT Infineon Technologies

Other Datasheets by Infineon

Part Number Description
SIGC12T120E IGBT
SIGC12T120LE IGBT
SIGC12T60SNC IGBT
SIGC100T60R3E IGBT
SIGC100T65R3E IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SIGC128T170R3E IGBT3 Power Chip Features:  1700V Trench & Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules Applications:  drives Chip Type VCE IC Die Size SIGC128T170R3E 1700V 100A 11.33 x 11.33 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 11.33 x 11.33 8 x ( 4.48 x 2.15 ) 1.303 x 0.838 mm2 128.