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SIGC128T170R3E
IGBT3 Power Chip
Features: 1700V Trench & Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling
This chip is used for: power modules
Applications: drives
Chip Type
VCE
IC
Die Size
SIGC128T170R3E 1700V 100A 11.33 x 11.33 mm2
C
G E
Package sawn on foil
Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
11.33 x 11.33
8 x ( 4.48 x 2.15 ) 1.303 x 0.838
mm2
128.
SIGC128T170R3E Datasheet
