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SIGC18T60SNC - IGBT

General Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Key Features

  • 600V NPT technology.
  • 100µm chip.
  • short circuit prove.
  • positive temperature coefficient.
  • easy paralleling C This chip is used for:.
  • SGP20N60.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com SIGC18T60SNC IGBT Chip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling C This chip is used for: • SGP20N60 Applications: • drives G E Chip Type SIGC18T60SNC SIGC18T60SNC VCE 600V 600V ICn 20A 20A Die Size 4.3 x 4.3 mm2 4.3 x 4.3 mm2 Package sawn on foil unsawn Ordering Code Q67041-S2856A001 Q67041-S2856A002 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 4.3 x 4.3 18.49 / 14.3 2.48 x 2.98 0.7 x 1.