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SIGC18T60UN
High Speed IGBT Chip in NPT-technology
FEATURES:
• low Eoff • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling
This chip is used for: • SGP20N60HS
Applications: • Welding • PFC • UPS
C G
E
Chip Type SIGC18T60UN
VCE
ICn
Die Size
600V 20A
4.3 x 4.3 mm2
Package Ordering Code
sawn on foil
Q67050-A4222A101
MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization
Collector metallization
Die bond Wire bond Reject Ink Dot Size
Recommended Storage Environment
4.3 x 4.3
mm2
18.5 / 14.2
2.986 x 2.486
1.078 x 0.
SIGC18T60UN Datasheet
