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SIGC20T120
IGBT Chip
FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
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This chip is used for: • power module
C
Applications: • drives
G
E
Chip Type SIGC20T120
VCE 1200V
ICn 15A
Die Size 4.41 x 4.47 mm2
Package sawn on foil
Ordering Code Q67050A4103-A001
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 4.41 x 4.47 2.995 x 2.901 1.107 x 0.702 19.7 / 12.
SIGC20T120 Datasheet
