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SIGC20T120E - IGBT

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.2 2.3 Subjects (major changes since last revision) Wafer diameter change to 200 mm Additional basic types L7631M, L7631T, L7631E Date 06.07.20

Features

  • 1200V Trench + Field Stop technology.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling This chip is used for:.
  • power modules.

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Datasheet preview – SIGC20T120E

Datasheet Details

Part number SIGC20T120E
Manufacturer Infineon
File Size 166.25 KB
Description IGBT
Datasheet download datasheet SIGC20T120E Datasheet
Additional preview pages of the SIGC20T120E datasheet.

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Full PDF Text Transcription

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SIGC20T120E IGBT3 Power Chip Features:  1200V Trench + Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules Applications:  drives Chip Type SIGC20T120E VCE IC 1200V 15A Die Size 4.41 x 4.47 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 4.41 x 4.47 2.995 x 2.901 1.107 x 0.702 mm2 19.
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