| Part number | SPB100N04S2L-03 |
|---|---|
| Manufacturer | Infineon |
| File Size | 309.19 KB |
| Description | OptiMOS Power-Transistor |
| Datasheet | SPB100N04S2L-03_InfineonTechnologiesAG.pdf |
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SPP100N04S2L-03 SPB100N04S2L-03 OptiMOS® Power-Transistor • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 40 3 100 TC=25°C Value 100 100 Unit A ID Pulsed drain current ID=80A, V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=100A, VDS=32V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation
| Part Number | Description |
|---|---|
| SPB100N04S2L-03 | OptiMOS Power-Transistor |
| SPB100N04S2-04 | OptiMOS Power-Transistor |
| SPB100N04S2-04 | OptiMOS Power-Transistor |
| SPB100N03S2-03 | OptiMOS Power-Transistor |
| SPB100N03S2-03 | OptiMOS Power-Transistor |
| SPB100N03S2L-03 | OptiMOS Power-Transistor |
| SPB100N03S2L-03 | OptiMOS Power-Transistor |
| SPB100N06S2-05 | OptiMOS Power-Transistor |
| SPB100N06S2-05 | OptiMOS Power-Transistor |
| SPB100N06S2L-05 | OptiMOS Power-Transistor |
