SPB100N06S2-05 - OptiMOS Power-Transistor

Datasheet Summary

Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Infineon Technologies

📥 Download Datasheet

Datasheet Details

Part number	SPB100N06S2-05
Manufacturer	Infineon Technologies
File Size	312.78 KB
Description	OptiMOS Power-Transistor
Datasheet	SPB100N06S2-05 Datasheet
Additional preview pages of the SPB100N06S2-05 datasheet.

📁 Similar Datasheet

SPB100UFA - (SPBxx0UFA) Single Phase Bridge (VMI)
SPB100UFB - (SPBxx0UFB) Single Phase Bridge (VMI)
SPB11N60C3 - N-Channel MOSFET (INCHANGE)
SPB11N60S5 - N-Channel MOSFET (INCHANGE)
SPB12N50C3 - N-Channel MOSFET (INCHANGE)
SPB150UFA - (SPBxx0UFA) Single Phase Bridge (VMI)
SPB150UFB - (SPBxx0UFB) Single Phase Bridge (VMI)
SPB16N50C3 - N-Channel MOSFET (INCHANGE)
SPB17N80C2 - Power Transistor (Infineon)
SPB17N80C3 - N-Channel MOSFET (INCHANGE)

Other Datasheets by Infineon Technologies

SPB100N06S2-05 - OptiMOS Power-Transistor
SPB100N06S2L-05 - OptiMOS Power-Transistor
SPB100N06S2L-05 - OptiMOS Power-Transistor
SPB100N03S2-03 - OptiMOS Power-Transistor
SPB100N03S2-03 - OptiMOS Power-Transistor
SPB100N03S2L-03 - OptiMOS Power-Transistor
SPB100N03S2L-03 - OptiMOS Power-Transistor
SPB100N04S2-04 - OptiMOS Power-Transistor

Full PDF Text Transcription

Click to expand full text

SPP100N06S2-05 SPB100N06S2-05 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 55 4.7 100 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP100N06S2-05 SPB100N06S2-05 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6048 Q67060-S6049 Marking PN0605 PN0605 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 100 100 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 400 810 30 6 ±20 300 -55...

Published: Jun 7, 2005 |