SPB100N08S2-07
SPB100N08S2-07 is OptiMOS Power-Transistor manufactured by Infineon.
SPP100N08S2-07 SPB100N08S2-07 OptiMOS® Power-Transistor
Feature
- N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
75 6.8 100
P- TO220 -3-1
V mΩ A
- Enhancement mode
- 175°C operating temperature
- Avalanche rated
- dv/dt rated
Type SPP100N08S2-07 SPB100N08S2-07
Package P- TO220 -3-1 P- TO263 -3-2
Ordering Code Q67060-S6044 Q67060-S6046
Marking PN0807 PN0807
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
Value 100 100
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
400 810 30 6 ±20 300 -55... +175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single...
