SPB10N10 - SIPMOS Power-Transistor

Datasheet Summary

Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Infineon Technologies

📥 Download Datasheet

Datasheet Details

Part number	SPB10N10
Manufacturer	Infineon Technologies
File Size	508.25 KB
Description	SIPMOS Power-Transistor
Datasheet	SPB10N10 Datasheet
Additional preview pages of the SPB10N10 datasheet.

📁 Similar Datasheet

SPB100UFA - (SPBxx0UFA) Single Phase Bridge (VMI)
SPB100UFB - (SPBxx0UFB) Single Phase Bridge (VMI)
SPB11N60C3 - N-Channel MOSFET (INCHANGE)
SPB11N60S5 - N-Channel MOSFET (INCHANGE)
SPB12N50C3 - N-Channel MOSFET (INCHANGE)
SPB150UFA - (SPBxx0UFA) Single Phase Bridge (VMI)
SPB150UFB - (SPBxx0UFB) Single Phase Bridge (VMI)
SPB16N50C3 - N-Channel MOSFET (INCHANGE)
SPB17N80C2 - Power Transistor (Infineon)
SPB17N80C3 - N-Channel MOSFET (INCHANGE)

Other Datasheets by Infineon Technologies

SPB10N10 - SIPMOS Power-Transistor
SPB100N03S2-03 - OptiMOS Power-Transistor
SPB100N03S2-03 - OptiMOS Power-Transistor
SPB100N03S2L-03 - OptiMOS Power-Transistor
SPB100N03S2L-03 - OptiMOS Power-Transistor
SPB100N04S2-04 - OptiMOS Power-Transistor
SPB100N04S2-04 - OptiMOS Power-Transistor
SPB100N04S2L-03 - OptiMOS Power-Transistor

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com Preliminary data SPI10N10 SPP10N10,SPB10N10 SIPMOS Power-Transistor Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 170 10.3 P-TO220-3-1 V m A Type SPP10N10 SPB10N10 SPI10N10 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4118 Q67042-S4119 Q67042-S4120 Marking 10N10 10N10 10N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 10.3 7.8 Unit A Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 41.2 60 6 ±20 50 -55... +175 55/175/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =10.

Published: Sep 11, 2007 |