| Part number | SPB11N60C3 |
|---|---|
| Manufacturer | Infineon |
| File Size | 352.75 KB |
| Description | Cool MOS Power Transistor |
| Datasheet | SPB11N60C3_InfineonTechnologiesAG.pdf |
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Final data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 VDS @ Tjmax RDS(on) ID 650 0.38 11 V Ω A Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2)
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
SPB11N60C3 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| SPB11N60C2 | Cool MOS Power Transistor |
| SPB11N60C2 | Power Transistor |
| SPB11N60S5 | Cool MOS Power Transistor |
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| SPB100N03S2-03 | OptiMOS Power-Transistor |
| SPB100N03S2L-03 | OptiMOS Power-Transistor |
| SPB100N03S2L-03 | OptiMOS Power-Transistor |
| SPB100N04S2-04 | OptiMOS Power-Transistor |
| SPB100N04S2-04 | OptiMOS Power-Transistor |
| SPB100N04S2L-03 | OptiMOS Power-Transistor |
