SPB11N60S5 Overview
SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-1 VDS RDS(on) ID P-TO262 P-TO263-3-2 600 0.38 11 V Ω A P-TO220-3-1 2 1 23 Type Package Ordering Code SPP11N60S5 SPB11N60S5 SPI11N60S5 ID Value 11 7 Unit A Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
