SPB11N60S5 Datasheet
SPB11N60S5 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
Isc N-Channel MOSFET Transistor SPB11N60S5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variatio.
*With To-263(D2PAK) package
*Low input capacitance and gate charge
*Low gate input resistance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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SPB11N60S5 Datasheet (Infineon)
Infineon
and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare.
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* Ultra low effective capacitances
* Improved transconductance
P-TO220-3-1
VDS RDS(on) ID
P-TO262 P-TO263-3-2
600 0.38 11
V Ω A
P-TO220-3-1
2
1
23
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