| Part number | SPB160N04S2-03 |
|---|---|
| Manufacturer | Infineon |
| File Size | 298.30 KB |
| Description | OptiMOS Power-Transistor |
| Datasheet | SPB160N04S2-03_InfineonTechnologiesAG.pdf |
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SPB160N04S2-03 OptiMOS® Power-Transistor • N-Channel Product Summary VDS R DS(on) ID 40 2.9 160 ID=80A, V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=160A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation
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