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SPB18P06P - SIPMOS Power-Transistor

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Infineon Technologies

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SPB18P06P SIPMOS Power-Transistor by Infineon Technologies - Datasheet Preview — Datasheet preview – SPB18P06P

Datasheet Details

Part number	SPB18P06P
Manufacturer	Infineon Technologies
File Size	441.39 KB
Description	SIPMOS Power-Transistor
Datasheet	SPB18P06P Datasheet
Additional preview pages of the SPB18P06P datasheet.

Product details

Features

P-Channel.
Enhancement mode.
Avalanche rated.
dv /dt rated.
175°C operating temperature.
Pb-free lead plating; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPB18P06P G -60 V 0.13 Ω -18.6 A PG-TO263-3 Type Package SPB18P06PG PG-TO263-3 Tape and reel information 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol.

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Published: Jun 7, 2005 |