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SPB18P06P - SIPMOS Power-Transistor

Datasheet Summary

Features

  • P-Channel.
  • Enhancement mode.
  • Avalanche rated.
  • dv /dt rated.
  • 175°C operating temperature.
  • Pb-free lead plating; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPB18P06P G -60 V 0.13 Ω -18.6 A PG-TO263-3 Type Package SPB18P06PG PG-TO263-3 Tape and reel information 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol.

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Datasheet Details

Part number SPB18P06P
Manufacturer Infineon Technologies
File Size 441.39 KB
Description SIPMOS Power-Transistor
Datasheet download datasheet SPB18P06P Datasheet
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Full PDF Text Transcription

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SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead plating; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPB18P06P G -60 V 0.13 Ω -18.6 A PG-TO263-3 Type Package SPB18P06PG PG-TO263-3 Tape and reel information 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=100 °C T A=25 °C Marking Lead free 18P06P Yes Packing Non dry Value Unit steady state -18.7 A -13.2 -74.8 Avalanche energy, single pulse E AS I D=18.
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