SPB18P06P
SPB18P06P is SIPMOS Power-Transistor manufactured by Infineon.
SIPMOS® Power-Transistor
Features
- P-Channel
- Enhancement mode
- Avalanche rated
- dv /dt rated
- 175°C operating temperature
- Pb-free lead plating; RoHS pliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101
Product Summary V DS R DS(on),max ID
SPB18P06P G
-60 V 0.13 Ω -18.6 A
PG-TO263-3
Type
Package
SPB18P06PG PG-TO263-3
Tape and reel information 1000 pcs / reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current
ID I D,pulse
T A=25 °C T A=100 °C T A=25 °C
Marking Lead free 18P06P Yes
Packing Non dry
Value
Unit steady state
-18.7
-13.2
-74.8
Avalanche...
