SPB18P06PG Overview
SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead plating; RoHS pliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPB18P06P G ±20 81.1 "-55 ... +175" 260 °C 55/175/56 kV/µs Thermal characteristics
SPB18P06PG Key Features
- P-Channel
- Enhancement mode
- Avalanche rated
- dv /dt rated
- 175°C operating temperature
- Pb-free lead plating; RoHS pliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101
- 60 V 0.13 Ω -18.6 A
- 18.7 -13.2 -74.8
- case Thermal resistance, junction
- ambient,leaded SMD verson, device on PCB
