SPB21N10
SPB21N10 is SIPMOS Power-Transistor manufactured by Infineon.
Feature
N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
P-TO262-3-1 P-TO263-3-2
Product Summary VDS R DS(on) ID 100 80 21
P-TO220-3-1
V m A
Type SPP21N10 SPB21N10 SPI21N10
Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1
Ordering Code Q67042-S4116 Q67042-S4102 Q67042-S4117
Marking 21N10 21N10 21N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value 21 15.0
Unit A
Pulsed drain current
..net
ID puls EAS dv/dt VGS Ptot Tj , Tstg
84 130 6 ±20 90 -55... +175 55/175/56 m J k V/µs V W °C
TC=25°C
Avalanche energy, single pulse
ID =21 A , VDD =25V, RGS =25
Reverse diode dv/dt
IS =21A, VDS =80V, di/dt=200A/µs, Tjmax =175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2002-01-31
Preliminary data
SPI21N10 SPP21N10,SPB21N10
Thermal Characteristics Parameter Characteristics Thermal resistance, junction
- case Thermal resistance, junction
- ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
F)
Symbol min. Rth JC Rth JA Rth JA
- Values typ. max. 1.7 62 62...
