SPB35N10
SPB35N10 is SIPMOS Power-Transistor manufactured by Infineon.
Preliminary data
SPI35N10 SPP35N10,SPB35N10
SIPMOS Power-Transistor
Feature
N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
P-TO262-3-1 P-TO263-3-2
Product Summary VDS R DS(on) ID 100 44 35
P-TO220-3-1
V A m
Type SPP35N10 SPB35N10 SPI35N10
Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1
Ordering Code Q67042-S4123 Q67042-S4103 Q67042-S4124
Marking 35N10 35N10 35N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value 35 26.4
Unit A
Pulsed drain current
TC=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
140 245 6 ±20 150 -55... +175 55/175/56 mJ kV/µs V W...
