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SPB35N10 - SIPMOS Power-Transistor

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and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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Part number SPB35N10
Manufacturer Infineon Technologies
File Size 480.71 KB
Description SIPMOS Power-Transistor
Datasheet download datasheet SPB35N10 Datasheet
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Preliminary data SPI35N10 SPP35N10,SPB35N10 SIPMOS Power-Transistor Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 44 35 P-TO220-3-1 V A m Type SPP35N10 SPB35N10 SPI35N10 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4123 Q67042-S4103 Q67042-S4124 Marking 35N10 35N10 35N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 35 26.4 Unit A Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 140 245 6 ±20 150 -55...
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