• Part: SPB80N04S2L-03
  • Description: OptiMOS Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 306.29 KB
Download SPB80N04S2L-03 Datasheet PDF
Infineon
SPB80N04S2L-03
SPB80N04S2L-03 is OptiMOS Power-Transistor manufactured by Infineon.
eature - N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 40 3.1 80 P- TO220 -3-1 V mΩ A - Enhancement mode - Logic Level - 175°C operating temperature - Avalanche rated - dv/dt rated Type SPP80N04S2L-03 SPB80N04S2L-03 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67040-S4261 Q67040-S4262 Marking 2N04L03 2N04L03 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC = 25 °C Value 80 80 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 810 30 6 ±20 300 -55... +175 55/175/56 k V/µs V W °C m J Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=32V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C...