SPB80N04S2L-03
SPB80N04S2L-03 is Power-Transistor manufactured by Infineon.
Feature
Opti MOS =Power-Transistor
Product Summary VDS RDS(on) ID
P-TO263-3-2 max. SMD version
- N-Channel
- Enhancement mode
- Logic Level
- =175°C operating temperature
- Avalanche rated
- dv/dt rated
40 3.1 80
P-TO220-3-1
V mΩ A
Type SPP80N04S2L-03 SPB80N04S2L-03
Package P-TO220-3-1 P-TO263-3-2
Ordering Code Q67040-S4261 Q67040-S4262
Marking 2N04L03 2N04L03
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol ID Value Unit
Continuous drain current
TC = 25 °C, 1) TC=100°C
A 80 80
Pulsed drain current
TC=25°C
ID puls EAS EAR
320 810 30 6 ±20 300 -55... +175 55/175/56 k V/µs V W °C m J
Avalanche energy, single pulse
ID =80 A , VDD=25V, RGS =25Ω
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
IS =80A, VDS=32V, di/dt=200A/µs, Tjmax =175°C dv/dt
VGS Ptot Tj ,...
