SPB80N06S-08 Datasheet | Infineon

tures - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Avalanche test - Repetive Avalanche up to Tjmax = 175 °C - dv /dt rated Type SPB80N06S-08 SPI80N06S-08 SPP80N06S-08 Package P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Ordering Code P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 VDD=30 V, ID=80 A, VGS=10 V, RG=2.4 Ω Marking Q67060-S6185 1N0608 T C=25 °C, V GS=10 V Q67060-S6187 1N0608 T C=100 °C, V GS=10 V Q67060-S6186 1N0608 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions ID T C=25 °C, V GS=10 V Value Unit A T C=100 °C, V GS=10 V Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, periodic2) Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.0 page 1 2) 80 320 700 30 6 ±20 k V/µs V W °C m J I D,pulse E AS E AR dv /dt V GS P tot T j, T stg T C=25 °C I D=80 A, R GS=25 Ω, V DD=25 V T j≤175 °C I D=80 A, V DS=40 V, di /dt =200 A/µs, T j,max=175 °C T C=25 °C 300 -55 ... +175 55/175/56 2004-11-30 .. SPI80N06S-08, SPP80N06S-08 Symbol Conditions min. Values typ. max. Unit Parameter Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R th JC R th JA R th JA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 m A V GS(th) I DSS V DS=V GS, I D=240 µA V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=150 °C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=80 A V GS=10 V, I D=80 A SMD version Transconductance2) footnote on page 3 g fs |V DS|>2|I D|R DS(on)max, I D=80 A 55 2.1 3.0 0.1 4 1...