SPB80N06S2-09 Datasheet | Infineon

Feature - N-Channel Product Summary VDS R DS(on) ID P- TO263 -3-2 55 9.1 80 P- TO220 -3-1 V mΩ A - Enhancement mode - 175°C operating temperature - Avalanche rated - dv/dt rated Type SPP80N06S2-09 SPB80N06S2-09 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6025 Q67060-S6027 Marking 2N0609 2N0609 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 70 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 370 19 6 ±20 190 -55... +175 55/175/56 k V/µs V W °C m J Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPP80N06S2-09 SPB80N06S2-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. Rth JC Rth JA Rth...