• Part: SPB80N06S2L-05
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 453.75 KB
Download SPB80N06S2L-05 Datasheet PDF
Infineon
SPB80N06S2L-05
SPB80N06S2L-05 is Power-Transistor manufactured by Infineon.
Feature - N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 55 4.5 80 P- TO220 -3-1 V mΩ A - Enhancement mode - Logic Level - Avalanche rated - dv/dt rated Type SPP80N06S2L-05 SPB80N06S2L-05 SPI80N06S2L-05 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67040-S4246 Q67040-S4256 Q67060-S7422 Marking 2N06L05 2N06L05 2N06L05 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 320 800 30 6 ±20 300 -55... +175 55/175/56 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω m J Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C k V/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 .. SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. Rth JC Rth JA Rth...