• Part: SPB80N06S2L-06
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 348.01 KB
Download SPB80N06S2L-06 Datasheet PDF
Infineon
SPB80N06S2L-06
SPB80N06S2L-06 is Power-Transistor manufactured by Infineon.
eature - N-Channel 55 6.3 80 P- TO220 -3-1 V mΩ A - Enhancement mode - Logic Level - 175°C operating temperature - Avalanche rated - dv/dt rated Type SPP80N06S2L-06 SPB80N06S2L-06 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6033 Q67060-S6034 Marking 2N06L06 2N06L06 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 530 25 6 ±20 250 -55... +175 55/175/56 k V/µs V W °C m J Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page...