SPB80N06S2L-06
SPB80N06S2L-06 is Power-Transistor manufactured by Infineon.
eature
- N-Channel
55 6.3 80
P- TO220 -3-1
V mΩ A
- Enhancement mode
- Logic Level
- 175°C operating temperature
- Avalanche rated
- dv/dt rated
Type SPP80N06S2L-06 SPB80N06S2L-06
Package P- TO220 -3-1 P- TO263 -3-2
Ordering Code Q67060-S6033 Q67060-S6034
Marking 2N06L06 2N06L06
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
Value 80 80
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
320 530 25 6 ±20 250 -55... +175 55/175/56 k V/µs V W °C m J
Avalanche energy, single pulse
ID=80 A , V DD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
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