SPB80N06S2L-09
SPB80N06S2L-09 is Power-Transistor manufactured by Infineon.
Feature
- N-Channel
55 8.5 80
P- TO220 -3-1
V mΩ A
- Enhancement mode
- Logic Level
- 175°C operating temperature
- Avalanche rated
- dv/dt rated
Type SPP80N06S2L-09 SPB80N06S2L-09
Package P- TO220 -3-1 P- TO263 -3-2
Ordering Code Q67060-S6031 Q67060-S6032
Marking 2N06L09 2N06L09
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
Value 80 73
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
320 370 19 6 ±20 190 -55... +175 55/175/56 k V/µs V W °C m J
Avalanche energy, single pulse
ID=80 A , V DD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
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SPP80N06S2L-09 SPB80N06S2L-09
Symbol min. Values typ. 0.52 max. 0.8 62 62 40 K/W Unit
Thermal Characteristics Parameter Characteristics Thermal resistance, junction
- case Thermal resistance, junction
- ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling...
