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SPB80N06S2L-11 - Power-Transistor

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Part number SPB80N06S2L-11
Manufacturer Infineon Technologies
File Size 323.35 KB
Description Power-Transistor
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OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Automotive AEC Q101 qualified • Avalanche rated • dv/dt rated P- TO262 -3-1 SPI80N06S2L-11 SPP80N06S2L-11,SPB80N06S2L-11 Product Summary VDS 55 V RDS(on) 11 mΩ ID 80 A P- TO263 -3-2 P- TO220 -3-1 Type Package Ordering Code SPP80N06S2L-11 P- TO220 -3-1 Q67060-S6035 SPB80N06S2L-11 P- TO263 -3-2 Q67060-S6036 SPI80N06S2L-11 P- TO262 -3-1 Q67060-S6181 Marking 2N06L11 2N06L11 2N06L11 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TC=25°C 1) ID TC=100°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 A , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt ID puls EAS EAR dv/dt IS=80A, VDS
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