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SPB80N10L - SIPMOS Power-Transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary data SPI80N10L SPP80N10L,SPB80N10L SIPMOS Power-Transistor Feature Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated 100 14 80 P-TO220-3-1 V A m Type SPP80N10L SPB80N10L SPI80N10L Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4173 Q67042-S4171 Q67042-S4172 Marking 80N10L 80N10L 80N10L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 80 58 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg 320 700 25 6 ±20 250 -55...