The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SPD08N50C3
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 • Ultra low gate charge
VDS @ Tjmax 560 V
RDS(on)
0.6 Ω
ID
7.6 A
PG-TO252
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
, available in Halogen free mold compounda)
• Fully qualified according to JEDEC for Industrial Applications
Type SPD08N50C3
Package PG-TO252
Ordering Code Q67040-S4569
Marking 08N50C3
Maximum Ratings, at TC = 25°C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=7.
SPD08N50C3 Datasheet
