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Preliminary data
SPD11N10 SPU11N10
Product Summary VDS RDS(on) ID 100 170 10.5
P-TO252
SIPMOS Power-Transistor
Feature
N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
V A
m
P-TO251
Type SPD11N10 SPU11N10
Package P-TO252 P-TO251
Ordering Code Q67042-S4121 Q67042-S4122
Marking 11N10 11N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value 10.5 7.8
Unit A
Pulsed drain current
TC=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
41.2 60 6 ±20 50 -55... +175 55/175/56 mJ kV/µs V W °C
Avalanche energy, single pulse
ID =10.5 A , VDD =25V, RGS =25
Reverse diode dv/dt
IS =10.