SPD11N10
SPD11N10 is SIPMOS Power-Transistor manufactured by Infineon.
Feature
N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
V A m
P-TO251
Type SPD11N10 SPU11N10
Package P-TO252 P-TO251
Ordering Code Q67042-S4121 Q67042-S4122
Marking 11N10 11N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value 10.5 7.8
Unit A
Pulsed drain current
TC=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
41.2 60 6 ±20 50 -55... +175 55/175/56 m J k V/µs V W °C
Avalanche energy, single pulse
ID =10.5 A , VDD =25V, RGS =25
Reverse diode dv/dt
IS =10.5A, VDS =80V, di/dt=200A/µs, Tjmax =175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2002-01-31
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction
- case Thermal resistance, junction
- ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
1)
SPD11N10 SPU11N10
Values min. typ. max. 3 100 75 50 K/W Unit
Symbol
Rth JC Rth JA Rth JA
- Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0V, ID =1m A
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100 2.1
Values typ. 3 max....
