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SPD11N10 - SIPMOS Power-Transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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Datasheet Details

Part number SPD11N10
Manufacturer Infineon
File Size 493.20 KB
Description SIPMOS Power-Transistor
Datasheet download datasheet SPD11N10 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary data SPD11N10 SPU11N10 Product Summary VDS RDS(on) ID 100 170 10.5 P-TO252 SIPMOS Power-Transistor Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated V A m P-TO251 Type SPD11N10 SPU11N10 Package P-TO252 P-TO251 Ordering Code Q67042-S4121 Q67042-S4122 Marking 11N10 11N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 10.5 7.8 Unit A Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 41.2 60 6 ±20 50 -55... +175 55/175/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =10.5 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =10.