SPD14N06S2-80
SPD14N06S2-80 is OptiMOS Power-Transistor manufactured by Infineon.
Feature
- N-Channel
Product Summary VDS R DS(on) ID 55 80 17
P- TO252 -3-11
V mΩ A
- Enhancement mode
- 175°C operating temperature
- Avalanche rated
- dv/dt rated
Type SPD14N06S2-80
Package Ordering Code P- TO252 -3-11 Q67060-S7423
Marking 2N0680
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C
Symbol ID
Value 17 12
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
68 43 3 6 ±20 30 -55... +175 55/175/56 k V/µs V W °C m J
Avalanche energy, single pulse
ID=14A, V DD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax 1) Reverse diode d v/dt
IS=14A, V DS=44V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
Thermal Characteristics Parameter Characteristics Thermal resistance, junction
- case Thermal resistance, junction
- ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
2)
Symbol min. Rth JC Rth JA Rth JA
- Values typ. 2.14 max. 3.2 100 75 50
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown...
