SPD30N03S2L-10 Datasheet | Infineon

Feature - N-Channel - Enhancement mode - Logic Level - Low On-Resistance RDS(on) - Excellent Gate Charge x RDS(on) product (FOM) - Superior thermal resistance - 175°C operating temperature - Avalanche rated - dv/dt rated ° Pb-free lead plating; Ro HS pliant Type Package SPD30N03S2L-10G PG-TO252-3 Marking 2N03L10 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=30 A , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg SPD30N03S2L-10 G Product Summary 30 V RDS(on) 10...