• Part: SPD30N06S2L-13
  • Description: OptiMOS Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 264.83 KB
Download SPD30N06S2L-13 Datasheet PDF
Infineon
SPD30N06S2L-13
SPD30N06S2L-13 is OptiMOS Power-Transistor manufactured by Infineon.
Feature - N-Channel Product Summary VDS R DS(on) ID 55 13 30 P- TO252 -3-11 V mΩ A - Enhancement mode - Logic Level - 175°C operating temperature - Avalanche rated - dv/dt rated Type SPD30N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67040-S4254 Marking 2N06L13 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1) TC=25°C Symbol ID Value 30 30 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 120 240 13.6 6 ±20 136 -55... +175 55/175/56 k V/µs V W °C m J Avalanche energy, single pulse ID=30 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=30A, VDS=44V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. Rth JC Rth JA Rth JA - Values typ. 0.69 max. 1.1 100 75...