SPD30N08S2L-21
SPD30N08S2L-21 is OptiMOS Power-Transistor manufactured by Infineon.
Feature
- N-Channel
Product Summary VDS R DS(on) ID 75 20.5 30
P- TO252 -3-11
V mΩ A
- Enhancement mode
- Logic Level
- 175°C operating temperature
- Avalanche rated
- dv/dt rated
Type SPD30N08S2L-21
Package Ordering Code P- TO252 -3-11 Q67060-S7414
Marking 2N08L21
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1)
TC=25°C
Symbol ID
Value 30 30
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
120 240 14 6 ±20 136 -55... +175 55/175/56 k V/µs V W °C m J
Avalanche energy, single pulse
ID=30 A , V DD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=30A, VDS=60V, di/dt=200A/µs, T jmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
Thermal Characteristics Parameter Characteristics Thermal resistance, junction
- case Thermal resistance, junction
- ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. Rth JC Rth JA Rth JA
- Values typ. 0.7 max. 1.1 100 75...
