SPD35N10
SPD35N10 is SIPMOS Power-Transistor manufactured by Infineon.
Feature
N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
Product Summary VDS R DS(on) ID 100 44 35
P-TO252
V A m
Type SPD35N10
Package P-TO252
Ordering Code Q67042-S4125
Marking 35N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value 35 26.4
Unit A
Pulsed drain current
TC=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
140 245 6 ±20 150 -55... +175 55/175/56 m J k V/µs V W °C
Avalanche energy, single pulse
ID =35 A , VDD =25V, RGS =25
Reverse diode dv/dt
IS =35A, VDS =80V, di/dt=200A/µs, Tjmax =175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2002-01-30
Preliminary data
Thermal Characteristics Parameter Characteristics Thermal resistance, junction
- case Thermal resistance, junction
- ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
F)
Symbol min. Rth JC Rth JA Rth JA
- Values typ. max. 1 100 75 50
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0V, ID =1m A
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100...
