The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SPP12N50C3 SPI12N50C3, SPA12N50C3
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge
VDS @ Tjmax 560 V
RDS(on)
0.38 Ω
ID
11.6 A
• Periodic avalanche rated
PG-TO220-F3P-31 PG-TO262- PG-TO220
• Extreme dv/dt rated
2
• Ultra low effective capacitances • Improved transconductance
1 23 P-TO220-3-31
P-TO220-3-1
23 1
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type SPP12N50C3
Package PG-TO220
Ordering Code Q67040-S4579
Marking 12N50C3
SPI12N50C3 SPA12N50C3
PG-TO262 Q67040-S4578 PG-TO220FP SP000216322
12N50C3 12N50C3
Maximum Ratings Parameter
Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=5.
SPI12N50C3 Datasheet
