SPI15N60CFD Datasheet | Infineon

Features - Intrinsic fast-recovery body diode - Extremely low reverse recovery charge - Ultra low gate charge - Extreme dv /dt rated - High peak current capability - Qualified according to JEDEC1) for target applications Cool MOS CFD designed for: - Softswitching PWM Stages - LCD & CRT TV Type Type SPI15N60CFD SPP15N60CFD Package Package PG-TO262 PG-TO220 Marking Marking 15N60CFD 15N60CFD Product Summary V DS @ Tjmax R DS(on),max ID 650 V 0.330 Ω 13.4 PG-TO262 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive2),3) ..net Value 13.4 8.4 33 460 0.8 13.4 Unit A I D,pulse E AS E AR I AR dv /dt dv /dt di /dt V GS P tot T j, T stg T C=25 °C I D=6.7 A, V DD=50 V I D=13.4 A, V DD=50 V m J Avalanche current, repetitive2),3) Drain source voltage slope Reverse diode d v /dt Maximum diode mutation speed Gate source voltage A V/ns V/ns A/µs V I D=13.4 A, V DS=480 V, T j=125 °C I S=13.4 A, V DS=480 V, T j=125 °C static AC (f >1 Hz) T C=25 °C 80 40 600 ±20 ±30 156 -55 ... 150 Power dissipation Operating and storage temperature Mounting torque W °C Ncm M3 & 3.5 screws Rev. 1.0 page 1 2007-01-29 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wave soldering only allowed at leads R th JC R th JA leaded 1.6 mm (0.063 in.) from case for 10 s 0.8 62 K/W Values typ. max. Unit T sold - - °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V (BR)DS V GS(th) V GS=0 V, I D=13.4 A V DS=V GS, I D=750 µA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current ..net 600 3 700 4 Zero gate...