SPI47N10L
SPI47N10L is SIPMOS Power-Transistor manufactured by Infineon.
Feature
SIPMOS =Power-Transistor
Product Summary VDS RDS(on) ID
P-TO262-3-1 P-TO263-3-2
N-Channel Enhancement mode Logic Level .. 175°C operating temperature Avalanche rated dv/dt rated
100 26 47
P-TO220-3-1
V m A
Type SPP47N10L SPB47N10L SPI47N10L
Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1
Ordering Code Q67040-S4177 Q67040-S4176 tbd
Marking 47N10L 47N10L 47N10L
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value 47 33
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg
Page 1
188 400 17.5 6 ±20 175 -55... +175 55/175/56 2001-08-24 k V/µs V W °C m J
Avalanche energy, single pulse
ID =47 A , VDD =25V, RGS =25
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
IS =47A, VDS =0V, di/dt=200A/µs
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction
- case Thermal .. resistance, junction
- ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
1)
SPI47N10L SPP47N10L,SPB47N10L
Symbol min. Rth JC Rth JA Rth JA
- Values typ. max. 0.85 62 62 40
Unit
K/W
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown...
