• Part: SPI80N06S2-07
  • Description: N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Infineon
  • Size: 419.02 KB
Download SPI80N06S2-07 Datasheet PDF
Infineon
SPI80N06S2-07
SPI80N06S2-07 is N-Channel Power MOSFET manufactured by Infineon.
Feature - N-Channel - Enhancement mode - 175°C operating temperature - Avalanche rated - dv/dt rated P- TO262 -3-1 SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 Product Summary 55 V RDS(on) 6.6 mΩ 80 A P- TO263 -3-2 P- TO220 -3-1 Type SPP80N06S2-07 SPB80N06S2-07 SPI80N06S2-07 Package Ordering Code P- TO220 -3-1 Q67060-S6024 P- TO263 -3-2 Q67060-S6026 P- TO262 -3-1 Q67060-S6037 Marking 2N0607 2N0607 2N0607 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80A, VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=80A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 ID puls EAS EAR...