• Part: SPI80N06S2-08
  • Description: OptiMOS Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 457.84 KB
Download SPI80N06S2-08 Datasheet PDF
Infineon
SPI80N06S2-08
SPI80N06S2-08 is OptiMOS Power-Transistor manufactured by Infineon.
Feature - N-Channel Product Summary VDS R DS(on) ID P- TO262 -3-1 P- TO263 -3-2 55 8 80 P- TO220 -3-1 V mΩ A - Enhancement mode - 175°C operating temperature - Avalanche rated - dv/dt rated Type SPP80N06S2-08 SPB80N06S2-08 SPI80N06S2-08 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67060-S4283 Q67060-S4284 Q67060-S7430 Marking 2N0608 2N0608 2N0608 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 320 450 21.5 6 ±20 215 -55... +175 55/175/56 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω m J Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C k V/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 .. SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. Rth JC Rth JA Rth...