SPN01N60S5 Datasheet | Infineon

.. Preliminary data Cool MOS Power-Transistor New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Optimized capacitances Improved noise immunity C O OLMO S Power Semiconductors Product Summary VDS @ Tjmax RDS(on) ID SOT-223 ì 650 6 0.3 í î ï ÊÐÍðëïêí Type SPN01N60S5 Package SOT-223 Ordering Code Q67040-S4208 Marking 01N60S5 G,1 D,2/4 S,3 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current TA = 25 °C Reverse diode dv/dt IS = 0.3 A, VDS <VDSS , di/dt = 100 A/µs, Tjmax = 150 °C Gate source voltage Power dissipation TA = 25 °C Operating and storage temperature Tj , Tstg -55... +150 °C VGS Ptot 20 1.8 V W dv/dt 6 k V/µs 1) Symbol ID Value 0.3 0.2 Unit A ID puls 2001-07-25 .. Preliminary data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Thermal Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Rth JS Rth JA 110 35 Symbol min. Values typ. max. 72 Unit K/W K/W Static Characteristics , at Tj = 25 °C, unless otherwise specified Drain-source breakdown voltage VGS = 0 V, ID = 0.25 m A Gate threshold voltage, VGS = VDS ID = 250 µA, Tj = 25 °C Zero gate voltage drain current, VDS=VDSS VGS = 0 V, Tj = 25 °C VGS = 0 V, Tj = 150 °C Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-source on-state resistance VGS = 10 V, ID = 0.2 A RDS(on) 5.5 6 IGSS VGS(th) IDSS 0.5 1 50 100 n A 2.3 3 3.7 µA V(BR)DSS 600 V 1current limited by T jmax 2 Device on 40mm- 40mm- 1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. 2001-07-25...