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Rev. 2.1
SPN01N60C3
VDS @ Tjmax RDS(on) ID 650 6 0.3
SOT-223
4
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
V Ω A
3 2 1
VPS05163
Type
Package
Ordering Code
Marking
SPN01N60C3
SOT-223
Q67040-S4208
01N60C3
Maximum Ratings Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current, tp limited by Tjmax TA = 25 °C Gate source voltage static Gate source voltage AC (f >1Hz)
Power dissipation, T A = 25°C
Symbol ID
Value 0.3 0.2
Unit A
ID puls VGS VGS Ptot Tj , Tstg
1.6 ±20 ±30 1.8 -55... +150 W °C V
Operating and storage temperature
Page 1
2004-03-01
Rev. 2.