SPN01N60C3
SPN01N60C3 is Cool MOS Power Transistor manufactured by Infineon.
Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance
V Ω A
3 2 1
VPS05163
Type
Package
Ordering Code
Marking
SOT-223
Q67040-S4208
01N60C3
Maximum Ratings Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current, tp limited by Tjmax TA = 25 °C Gate source voltage static Gate source voltage AC (f >1Hz)
Power dissipation, T A = 25°C
Symbol ID
Value 0.3 0.2
Unit A
ID puls VGS VGS Ptot Tj , Tstg
1.6 ±20 ±30 1.8 -55... +150 W °C V
Operating and storage temperature
Page 1
2004-03-01
Rev. 2.1
Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, ID = 0.8 A, Tj = 125 °C
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction
- soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25m A Drain-Source avalanche V(BR)DS V GS=0V, ID=0.8A breakdown voltage Gate threshold voltage Zero gate voltage drain current
VGS(th) I DSS
ID=250µΑ, VGS=V DS V DS=600V, VGS=0V, Tj=25°C, Tj=150°C
Symbol min.
Rth JS Rth JA
Values typ. 35 110 max. 75 72 260
- Unit...
