SPN02N60C3
SPN02N60C3 is Power Transistor manufactured by Infineon.
Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Extreme dv/dt rated
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- Ultra
V Ω A low effective capacitances
3 2 1
VPS05163
Type SPN02N60C3
Package SOT223
Ordering Code Q67040-S4553
Marking 02N60C3
Maximum Ratings Parameter Symbol ID Value Unit
Continuous drain current
TA = 25 °C TA = 70 °C
A 0.4 0.3
Pulsed drain current, tp limited by Tjmax
TA = 25 °C Gate source voltage static
I D puls VGS VGS Ptot T j , T stg
2.2 ±20
±30
V W °C
Gate source voltage AC (f >1Hz)
Power dissipation, T A = 25°C
1.8 -55... +150
Operating and storage temperature
Page 1
2004-03-01
Rev. 2.1
Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, ID = 1.8 A, Tj = 125 °C
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics
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Parameter Thermal resistance, junction
- soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1)
Symbol min. Rth JS Rth...
