SPN02N60S5
SPN02N60S5 is Power Transistor manufactured by Infineon.
Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Extreme dv/dt rated
..
- Ultra
VDS RDS(on) ID
600 3 0.4
SOT-223
V Ω A low effective capacitances
- Improved transconductance
2 1
VPS05163
Type SPN02N60S5
Package SOT-223
Ordering Code Q67040-S4207
Marking 02N60S5
Maximum Ratings Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current, tp limited by Tjmax TA = 25 °C Gate source voltage Gate source voltage AC (f >1Hz)
Power dissipation, T A = 25°C
Symbol ID
Value 0.4 0.3
Unit A
ID puls VGS VGS Ptot Tj , Tstg
2.2 ±20 ±30 1.8 -55... +150 W °C V
Operating and storage temperature
Rev. 2.1
Page 1
2004-03-30
Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, ID = 1.8 A, Tj = 125 °C
Symbol dv/dt
Value 20
Unit V/ns
Thermal Characteristics
..
Parameter
Symbol min. Rth JS Rth JA
Values typ....
