SPP08P06P Description
Preliminary data SPP08P06P SPB08P06P SIPMOS ® Power-Transistor.
SPP08P06P Key Features
- 60 0.3 -8.8
- 35.2 70 4.2 6 kV/µs mJ
- case Thermal resistance, junction
- ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ
- SPP08P06P SPB08P06P
- 60 -2.1
- VGS = -20 V, VDS = 0 V
- 3.6 335 105 65 16