SPP08P06PH
SPP08P06PH is Power-Transistor manufactured by Infineon.
SPP08P06P H
SIPMOS® Power-Transistor
Features
Product Summary
- P-Channel
- Enhancement mode
- Avalanche rated
- dv/dt rated
Drain source voltage
VDS -60 V
Drain-source on-state resistance RDS(on) 0.3 W
Continuous drain current
ID -8.8 A
- 175°C operating temperature
- Pb-free lead plating; RoHS pliant
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
Type SPP08P06P H
Package PG-TO220-3
Pin 1 PIN 2/4 PIN 3 GDS
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current TC = 25 °C
ID puls
Avalanche energy, single pulse ID = -8.8 A , VDD = -25 V, RGS =...
