SPP08P06PH Description
SPP08P06P H SIPMOS® Power-Transistor.
SPP08P06PH Key Features
- P-Channel
- Enhancement mode
- Avalanche rated
- dv/dt rated
- 175°C operating temperature
- Pb-free lead plating; RoHS pliant
- 8.8 -6.2 -35.2
- 55...+175 55/175/56
- case Thermal resistance, junction
- ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1)