SPP10N10L
SPP10N10L is SIPMOS Power-Transistor manufactured by Infineon.
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SPI10N10L SPP10N10L
SIPMOS Power-Transistor
Feature
Product Summary VDS RDS(on) ID
PG-TO262-3-1
N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated
100 154 10.3
V m A
PG-TO220-3-1
Type SPP10N10L SPI10N10L
Package PG-TO220-3-1 PG-TO262-3-1
Ordering Code Q67042-S4163 Q67042-S4162
Marking 10N10L 10N10L
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value 10.3 8.1
Unit A
Pulsed drain current
TC=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
42.2 60 6 ±20 50 -55... +175 55/175/56 mJ kV/µs V W °C
Avalanche energy, single pulse
ID...
