Datasheet4U Logo Datasheet4U.com

SPP10N10 - SIPMOS Power-Transistor

Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

📥 Download Datasheet

Datasheet preview – SPP10N10

Datasheet Details

Part number SPP10N10
Manufacturer Infineon
File Size 508.25 KB
Description SIPMOS Power-Transistor
Datasheet download datasheet SPP10N10 Datasheet
Additional preview pages of the SPP10N10 datasheet.

📁 Similar Datasheet

  • SPP1013 - P-Channel MOSFET (SYNC POWER)
  • SPP1015 - P-Channel MOSFET (SYNC POWER)
  • SPP1021 - Dual P-Channel MOSFET (SYNC POWER)
  • SPP1023 - Dual P-Channel MOSFET (SYNC POWER)
  • SPP1027 - Dual P-Channel MOSFET (SYNC POWER)
  • SPP1031 - Dual P-Channel MOSFET (SYNC POWER)
  • SPP1071 - P-Channel MOSFET (SYNC POWER)
  • SPP1073 - P-Channel MOSFET (SYNC POWER)
  • SPP11N60C3 - N-Channel MOSFET (INCHANGE)
  • SPP11N60CFD - N-Channel MOSFET (INCHANGE)
Other Datasheets by Infineon Technologies

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Preliminary data SPI10N10 SPP10N10,SPB10N10 SIPMOS Power-Transistor Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 170 10.3 P-TO220-3-1 V m A Type SPP10N10 SPB10N10 SPI10N10 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4118 Q67042-S4119 Q67042-S4120 Marking 10N10 10N10 10N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 10.3 7.8 Unit A Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 41.2 60 6 ±20 50 -55... +175 55/175/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =10.
Published: |